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Robust A‐site Cation Engineering for Stable 2D High‐n Tin Perovskite Homologs with Bridged Lasing Emission Gaps

Journal content Created on 06 Aug 2025 by Angewandte Chemie Int Ed

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Angewandte Chemie Int Ed, Wiley-VCH

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Angewandte Chemie International Edition, EarlyView.

By incorporating distinct A‐site cations, a library of homologous 2D tin halide perovskites was synthesized. A‐site cation engineering enables the continuous bandgap tuning (1.62–2.01 eV) with minimal lattice mismatch (<3.6%). The n = 3 tin perovskites with multications exhibited exceptional phase stability, and the corresponding nanolasers bridged the emission gaps between single‐A‐cation analogs. Abstract Two‐dimensional high‐n halide perovskites (e.g., n  = 3) offer a unique platform for stable, efficient optoelectronics by synergizing improved stability with bulk‐like carrier transport. However, their development is hindered by the intrinsic trade‐off between continuous bandgap tunability and structural integrity. Here, we report robust A‐site cation engineering to overcome these limitations in n  = 3 tin perovskites. By incorporating distinct cations, we synthesized a library of homologous single crystals, including metastable (BA)2Cs2Sn3I10 (BA+: butylammonium) via growth kinetics control. It is revealed that A‐site cations critically govern structural symmetry, exciton‐phonon coupling, lasing, etc. Tailoring cation composition enables the continuous bandgap tuning (1.62–2.01 eV) with minimal lattice mismatch (<3.6%). A‐site cation engineering idealized the perovskite lattice and improved the crystal quality, e.g., the multication (BA)2Cs0.7MA0.4EA0.5GA0.4Sn3I10 (MA+: methylammonium, EA+: ethylammonium, GA+: guanidinium) achieves a long carrier lifetime (15.1 ns), nearly three times that of containing single A‐site, and then increases diffusion length to >1 µm. The n = 3 tin perovskites with multication exhibited exceptional phase stability and the corresponding nanolaser bridged the emission gaps between single‐A‐cation analogs, delivering a low threshold and unprecedented stability. Robust A-site Cation Engineering for Stable 2D High-n Tin Perovskite Homologs with Bridged Lasing Emission Gaps

By incorporating distinct A-site cations, a library of homologous 2D tin halide perovskites was synthesized. A-site cation engineering enables the continuous bandgap tuning (1.62–2.01 eV) with minimal lattice mismatch (<3.6%). The n = 3 tin perovskites with multications exhibited exceptional phase stability, and the corresponding nanolasers bridged the emission gaps between single-A-cation analogs.


Abstract

Two-dimensional high-n halide perovskites (e.g., n  = 3) offer a unique platform for stable, efficient optoelectronics by synergizing improved stability with bulk-like carrier transport. However, their development is hindered by the intrinsic trade-off between continuous bandgap tunability and structural integrity. Here, we report robust A-site cation engineering to overcome these limitations in n  = 3 tin perovskites. By incorporating distinct cations, we synthesized a library of homologous single crystals, including metastable (BA)2Cs2Sn3I10 (BA+: butylammonium) via growth kinetics control. It is revealed that A-site cations critically govern structural symmetry, exciton-phonon coupling, lasing, etc. Tailoring cation composition enables the continuous bandgap tuning (1.62–2.01 eV) with minimal lattice mismatch (<3.6%). A-site cation engineering idealized the perovskite lattice and improved the crystal quality, e.g., the multication (BA)2Cs0.7MA0.4EA0.5GA0.4Sn3I10 (MA+: methylammonium, EA+: ethylammonium, GA+: guanidinium) achieves a long carrier lifetime (15.1 ns), nearly three times that of containing single A-site, and then increases diffusion length to >1 µm. The n = 3 tin perovskites with multication exhibited exceptional phase stability and the corresponding nanolaser bridged the emission gaps between single-A-cation analogs, delivering a low threshold and unprecedented stability.

Yahui Li, Ming Xia, Yanxin Han, Zhihao Gong, Qi Yao, Hongzhi Zhou, Yiling Zhang, Tianyu Wang, Lijun Chai, Xin Sheng, Haiming Zhu, Long Yuan, Hua Wang, Enzheng Shi

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